High Voltage and GSM InGaP HBT (P5 & P6) power processes have been developed specifically for power amplifiers requiring operation at 8-10 volt bias and/or ruggedness under high VSWR conditions. GSM PA has demonstrated superior RF performance and can withstand more than 25:1 VSWR at 5V bias. Linear PA at 9V Vcc and has been demonstrated by customers for Infrastructure Driver Amplifiers. Both Processes have been in mass production since 2001.
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GSM 4W Power Cell Evaluation Board
	PA performance* from 5 consecutive lots 　*Measured on the evaluation board (as shown) Matched to 50Ώ When matched for best power fficiency, PAE ~68% Plotted data were not de-embedded When de-embedded to device level, PAE ~74% Device ruggedness: Survived >25:1 at 5V bias